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Active and Passive Electronic Components
Volume 16, Issue 1, Pages 55-64
http://dx.doi.org/10.1155/1993/86343

A Study of a-Sic/C-Si(n) Isotype Heterojunctions

Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, Xanthi 67100, Greece

Received 20 January 1993; Accepted 3 May 1993

Copyright © 1993 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1 = 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared