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Active and Passive Electronic Components
Volume 16, Issue 2, Pages 109-112
http://dx.doi.org/10.1155/1994/56526

First-Order Optical Phonon Processes in Amorphous Clusters

C./Julio Palacios, 11, 9º-B, Madrid 28029, Spain

Received 10 August 1993; Accepted 10 September 1993

Copyright © 1994 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small clusters in the context of dynamical disorder are considered. Average values of the absorption contributions due to both dynamical and structural disorders are introduced. In particular, an equation for the spectrum due to dynamical disorder in amorphous SiC is presented.