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Active and Passive Electronic Components
Volume 16, Issue 2, Pages 105-107

Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential Method

C./Julio Palacios, 11, 9º-B, Madrid 28029, Spain

Received 12 August 1993; Accepted 10 September 1993

Copyright © 1994 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The chemical pseudopotential method has been used by a number of workers in order to study the valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related to this method are unsolved. In this paper, a theoretical formulation tending to clarify some of these. problems is presented. This formulation concerns bonding orbitals and is valid, in principle, for amorphous silicon.