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Active and Passive Electronic Components
Volume 18 (1995), Issue 4, Pages 247-258

Characteristics of MOCVD-Grown High-Quality CdTe Layers on GaAs Substrates

1Department of Electronic Engineering, Nan-Tai Junior College of Technology, Tainan 710, Taiwan
2PO. Box 345, Tainan 704, Taiwan
3Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan

Received 10 January 1995; Accepted 3 April 1995

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


CdTe epitaxial layers are grown successfully on a (100)-GaAs substrate by metalorganic chemical vapor deposition (MOCVD) using dimethylcadrnium (DMCd) and diethyltelluride (DETe) as alkyl sources. The CdTe epilayers grown between 365°C and 380°C possess the best surface morphology. DETe is used as the controlling species of this growth system. Typical growth rates are varied from 2.51µm/hr to 5.31µm/hr. Low-temperature (12K) photoluminscence (PL) measurements reveal that 380°C is the best growth temperature and the full width at half maximum (FWHM) of the dominated peak is about 1.583eV by the bound-exciton emission of 9.38meV. The double crystal X-ray rocking curves (DCRC) indicate that the FWHM decreases while increasing the epilayer thickness and approaches a stable value about 80 arc sec under the growth rate of 5.2µm/hr, the growth temperature of 380°C and the DETe/DMCd concentration ratio of 1.7. The value of 80 arc sec in FWHM is the smallest one ever reported to date.