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Active and Passive Electronic Components
Volume 17 (1995), Issue 4, Pages 207-225

Photoluminescence Spectra of MESFET and HEMT

CSELT—Centro Studi e Laboratori Telecomunicazioni S.p.A., Via G. Reiss Romoli 274, Torino 10148, Italy

Received 4 June 1994; Accepted 21 June 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Photoluminescence spectroscopy has been employed in previous studies of semiconductor quantum wells and of buried interfaces in heterostructures. Nevertheless, the low amplitude of the signals collected, and the experimental difficulties, have limited the analyses to samples made on purpose.

On the contrary, in this work, the analyses at room temperature and at 4 K of a commercial MESFET and of a commercial HEMT are presented. With the performed experiments, new informations about the composition of these components were achieved; in particular signals from deep levels and from the Cr states of the HEMT substrate were detected.

After further studies on the shape of the spectra, the photoluminescence could probably be employed in reliability assessments to show the modifications in the semiconductor layer composition and in the shape of the heterostructure's surfaces of single devices.