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Active and Passive Electronic Components
Volume 18, Issue 3, Pages 137-144
http://dx.doi.org/10.1155/1995/85454

Dielectric Anisotropy in Partially Grain-Oriented Bi2VO5.5 Ceramics

Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India

Received 1 September 1994

Copyright © 1995 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5 exhibit grain orientation (~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequently annealed ceramics show ferroelectric domains. These post-annealed ceramics possess dielectric anisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K) between the directions parallel and perpendicular to the quenching direction. The dielectric constants of the samples, obtained by quenching the melts, are higher than that of the post-annealed ceramics. Electrically poled and thermally cycled samples of both as-quenched and post-annealed exhibit ferroelectric hysteresis loops at 300 K.