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Active and Passive Electronic Components
Volume 20 (1997), Issue 2, Pages 95-103

Interfacial Dynamic Velocity for Solar Cell Characterization

1Laboratoire de Physique des Semiconducteurs et Enédrgetique, Faculté des Sciences Fanar, B.P. 90656, JDEIDET, Liban, France
2Centre d'Etudes Fondamentales, Université de Perpignan, PERPIGNAN Cedex 66860, France

Received 29 July 1996; Accepted 30 August 1996

Copyright © 1997 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new parameter for solar cell characterization has been introduced. The n–P junction has been considered as an active interface and an interfacial dynamic velocity is defined at the base boundary of the space charge region. We show that this interracial dynamic velocity depends on the base width, base doping profile, and the recombination velocity at the device back surface. Additionally, it is shown to be a function of the operating conditions such as the applied potential and the illumination level.