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Volume 19, Issue 4, Pages 217-223
http://dx.doi.org/10.1155/1997/89056

Correlations Between the Thermoelectric Power and Hall Effect of SN- or GE-Doped IN2O3 Polycrystalline Ceramics

1Laboratoire d'Etudes pour la Microélectronique, Université de Bordeaux I, 351 Cours de la Libération, 33405 Talence cédex, France
2Laboratoire de Chimie du Solide du CNRS, Université de Bordeaux I, 351 Cours de la Libération, 33405 Talence cédex, France

Received 3 January 1996; Accepted 29 March 1996

Copyright © 1997 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based on a comparative study. The metal-type conductivity in both the samples occurs when the carrier concentration exceeds ~1019 cm-3. The carrier mobility is found to be higher for Ge-doped samples. The relation between the <<Lewis acid strength>> of the dopant element and its scattering cross section is also presented.