Correlations Between the
Thermoelectric Power and Hall Effect
of SN- or GE-Doped IN2O3 Polycrystalline
Ceramics
C. Marcel,1J. Salardenne,1S. Y. Huang,2G. Campet,2and J. Portier2
Received03 Jan 1996
Accepted29 Mar 1996
Abstract
The thermoelectric power and Hall effect of Sn-or Ge-doped In2O3 ceramics are investigated based on
a comparative study. The metal-type conductivity in both the samples occurs when the carrier
concentration exceeds ~1019 cm-3. The carrier mobility is found to be higher for Ge-doped samples.
The relation between the <<Lewis acid strength>> of the dopant element and its scattering cross section
is also presented.