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Active and Passive Electronic Components
Volume 21, Issue 3, Pages 231-257

Four Level Simulation of MOSFET

Department of Electrical Engineering, Jamia Millia Islamia, India

Received 6 January 1998; Accepted 15 April 1998

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.