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Active and Passive Electronic Components
Volume 21, Issue 2, Pages 73-78

N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy

Department of Electrical Engineering, Far-East Junior College of Technology and Commerce, Tainan 744, Taiwan

Received 17 June 1996

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively. A lasing threshold current density, front slope efficiency, and external differential quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%, respectively. The peak emission wavelength is centered at about 980nm.