Diode Parameter Determination Applied to LDD-MOSFETs for Device
Characterization

De La Bardonnie, M.; Mialhe, P.; Bendada, E.; Blampain, E.; Hoffmann, A.; Charles, J.-P.

doi:https://doi.org/10.1155/1998/54921

Active and Passive Electronic Components

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Volume 20 | Article ID 054921 | https://doi.org/10.1155/1998/54921

Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization

M. De La Bardonnie,¹P. Mialhe,¹E. Bendada,¹E. Blampain,²A. Hoffmann,²and J.-P. Charles²

Received17 Apr 1997

Accepted22 Jul 1997

Abstract

The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the length and width of the gate. Intrinsic parameters are extracted from current-voltage characteristics and obtained dependent on these dimensions.

Copyright

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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