Active and Passive Electronic Components

Active and Passive Electronic Components / 1998 / Article

Open Access

Volume 20 |Article ID 059494 | https://doi.org/10.1155/1998/59494

M. A. Grado-Caffaro, M. Grado-Caffaro, "A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller", Active and Passive Electronic Components, vol. 20, Article ID 059494, 3 pages, 1998. https://doi.org/10.1155/1998/59494

A Quantitative Analysis of Tunneling Current in A MOS Cell for A Low-Voltage Microcontroller

Received28 May 1997
Accepted22 Jul 1997

Abstract

The tunneling current density in a MOS cell for a low-voltage microcontroller based on EEPROM is calculated for high electric strengths. Furthermore, this current density is discussed in terms of the oxide thickness and an approximate expression for the velocity of charge carriers is derived.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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