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Active and Passive Electronic Components
Volume 20 (1998), Issue 4, Pages 225-234

The a-SiC/c-Si(n) Isotype Heterojunction as a High Sensitivity Temperature Sensor

Laboratory of Electrical and Electronic Material Technology, Department of Electrical and Computer Engineering, Democritous University of Thrace, Xanthi 67100, Greece

Received 10 September 1997; Accepted 3 November 1997

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IRV) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IRV characteristics exhibit an almost constant current, whereas the reverse current IR depends strongly on T (from 230 K up to 320K). The V-T characteristics, at different reverse currents, reveal a highly temperature sensitive behavior for the a-SiC/c-Si(n) junction. The measured values of temperature sensitivity (Δ VT)max was found to be (≅−–2.5 V/K) in the moderate temperature range, which are much higher than those obtained with bulk semiconductor temperature sensors. The high sensitivity-temperature- range of the a-SiC/c-Si(n) heterojunctions can be controlled electrically within the regim of values from 230 K up to 320 K. Finally, the high sensitivity of these devices, in conjunction with the fact that a-SiC films can be used as an add-on to the existing Si technology, emerge new possibilities to the fabrication of high sensitivity temperature microsensors.