Abstract

A nonlinear lumped model can be developed for Gunn-Diodes to describe the diffusion effects as the domain travels from cathode to anode of a Gunn-Diode. The model describes the domain extinction and nucleation phenomena. It allows the user to specify arbitrary nonlinear drift velocity V(E) and nonlinear diffusion D(E).The model simulates arbitrary Gunn-Diode circuits operating in any matured high field domain or in the LSA mode.Here we have constructed an algorithm to lead to development of this model