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Active and Passive Electronic Components
Volume 21 (1998), Issue 1, Pages 17-21
http://dx.doi.org/10.1155/1998/79639

An Algorithm to Develop Lumped Model for Gunn-Diode Dynamics

Department of Electrical Engineering, I.I.T., Hauz Khas, New Delhi 110 016, India

Received 12 November 1997; Accepted 23 January 1998

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A nonlinear lumped model can be developed for Gunn-Diodes to describe the diffusion effects as the domain travels from cathode to anode of a Gunn-Diode. The model describes the domain extinction and nucleation phenomena. It allows the user to specify arbitrary nonlinear drift velocity V(E) and nonlinear diffusion D(E).

The model simulates arbitrary Gunn-Diode circuits operating in any matured high field domain or in the LSA mode.

Here we have constructed an algorithm to lead to development of this model