Surface Recombination Via
Interface Defects in Field Effect Transistors
E. Bendada,1K. Raïs,2P. Mialhe,3and J. P. Charles4
Received04 Feb 1997
Accepted13 Mar 1997
Abstract
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor
devices has been analyzed and compared with the experimental result. The
activity of interface traps is dependent on the energy level and on the operating
conditions. A model is shown to be powerful to describe the effect of energy level of bulk
recombination centers on the values of reverse recombination current.