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Active and Passive Electronic Components
Volume 20, Issue 3, Pages 143-145
http://dx.doi.org/10.1155/1998/93964

A Brief Study to Clarify Some Aspects Related to Vibrational Density of States for the Far Infrared Range in Amorphous Semiconductors

C/Julio Palacios 11, 9–B, Madrid 28029, Spain

Received 23 May 1997; Accepted 22 July 1997

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Phonon density of states of amorphous semiconductors for the far-infrared range is examined analytically. On the basis of this formulation, optical absorption corresponding to structural disorder is evaluated and discussed at the far-infrared range for a-Ge and a-Si.