Abstract
A theoretical model to evaluate the sensitivity of the tunneling current to the electric field in an n-channel MOSFET with two gates is proposed. This sensitivity is calculated in a real situation.
Open Access
On the Sensitivity of the Tunneling Current to Electric Field in a MOSFET with Two Gates
Received18 Jan 1999
Accepted09 Mar 1999
Copyright
Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the
Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.