A method for device characterization is experimented to qualify the relaxable damage in
hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of
the body-drain junction of power HEXFETs is presented for applied stress condition
Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse
recombination current are shown to be related to relaxation time, and are significant
at Vg=–Vd. These effects are discussed and explained by the evolution of the
interface states.
