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Active and Passive Electronic Components
Volume 22, Issue 4, Pages 265-282
http://dx.doi.org/10.1155/2000/90585

Degradation of VDMOSFET by Heavy Ion Irradiations

Centre d'Etudes Fondamentales, Université de Perpignan, 52- av de Villeneuve, Perpignan Cedex 66860, France

Received 28 December 1999; Accepted 28 January 2000

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.