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Active and Passive Electronic Components
Volume 23, Issue 3, Pages 115-129

Simulation of the Dynamic Transistor Negatrons

Vinnytsia State Technical University, 95 Chmelnitske Shose, Vinnytsia 286021, Ukraine

Received 24 November 1999; Accepted 28 January 2000

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the basis of non-linear charge model. The equivalent circuit and Volterra series were used for the calculation of dynamic negatrons' parameters. The expressions were obtained, which give the linear relation between current and voltage charges and allow calculating the transferring characteristics. Experimental oscillators are described, which confirm the theoretical predictions.