Active and Passive Electronic Components

Active and Passive Electronic Components / 2000 / Article

Open Access

Volume 23 |Article ID 586182 | https://doi.org/10.1155/APEC.23.75

A. T. Kollias, E. D. Tsamis, J. N. Avaritsiotis, "The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters", Active and Passive Electronic Components, vol. 23, Article ID 586182, 21 pages, 2000. https://doi.org/10.1155/APEC.23.75

The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters

Received20 Apr 2000
Accepted25 Apr 2000

Abstract

The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and silicon substrates were studied in order to assess their potential for the construction of RF overmoded filters. Films of high crystallographic orientation {002}, as shown by XRD measurements and SEM observations, and high value of keff2 , calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed on silicon substrates which showed a quality factor of 1000 without the use of a Bragg acoustic reflector, and a temperature drift of –30ppm/℃.

Copyright © 2000 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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