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Active and Passive Electronic Components
Volume 24, Issue 3, Pages 187-199

Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics

Laboratoire de Physique des Matériaux et de Microélectronique, Université Hassan II Aïn Chok Faculté des Sciences, Kin8, Route d'El Jadida, BP 5366 Maârif, Casablanca, Morocco

Received 15 April 2001; Accepted 15 May 2001

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-temporal gaussian distribution. The parasitic source and drain resistances are included. We also investigate the impact of the interface charge density, generated during stress, on the transconductance. Simulation results show a significant degradation of the drain current versus stress time.