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Active and Passive Electronic Components
Volume 24, Issue 1, Pages 23-29

A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, Morocco

Received 19 February 2001; Accepted 19 March 2001

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristic Id(Vg) and compared with the experimental characteristic Id(Vd).