A Physical Model for MOSFET Drain Current in Non-ohmic Regime Using Ohmic Regime Operation

Abstract

In order to characterise the velocity saturation phenomena in short channel MOSFET's, a simple method is proposed in this work. It is based on the comparison between transistor behaviour in ohmic and saturation regime respectively. Therefore, the MOSFET characteristic Id0(Vd). avoiding velocity saturation phenomena, can be obtained from ohmic characteristic Id(Vg) and compared with the experimental characteristic Id(Vd).