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Active and Passive Electronic Components
Volume 24 (2001), Issue 3, Pages 155-163
http://dx.doi.org/10.1155/2001/53209

Degradation of Junction Parameters of an Electrically Stressed NPN Bipolar Transistor

C.E.F., University of Perpignan, 52 av. de Villeneuve, Perpignan F-66860, France

Received 20 April 2001; Accepted 15 May 2001

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The effect of an electrical ageing on npn bipolar transistor has been studied. The current gain decreases substantially and the electrical properties are discussed. The emitter-base junction parameters are degraded during the electrical stress experiments. Both the amplitude and the rate of this degradation depend on the stress duration. The evaluation of these parameters allows to discuss hot carrier degradation process, to estimate the stress magnitude and to control the device.