Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

Abstract

As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance R_sd influence strongly the effective mobility.The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance R_sd. Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field [2], this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current I_dversus gate voltage V_g Curves.