Active and Passive Electronic Components

Active and Passive Electronic Components / 2001 / Article

Open Access

Volume 24 |Article ID 075780 |

A. El Abbassi, Y. Amhouche, E. Bendada, R. Rmaily, K. Raïs, "Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors", Active and Passive Electronic Components, vol. 24, Article ID 075780, 10 pages, 2001.

Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

Received05 Feb 2001
Accepted19 Mar 2001


As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field [2], this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current Idversus gate voltage Vg Curves.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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