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Active and Passive Electronic Components
Volume 24 (2001), Issue 1, Pages 13-22

Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors

1Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, Morocco
2Laboratoire de la Microélectronique et de l'instrumentation, Faculté des Sciences et Techniques, B.P. 509 Errachidia, Morocco

Received 5 February 2001; Accepted 19 March 2001

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.

The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enables a consistent modelling of the mobility to be obtained from low to high electric field [2], this allow to determine all model parameters in particular a Series Resistance from the plot of the transfer characteristic drain current Idversus gate voltage Vg Curves.