New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices
Between Liquid Helium to Room Temperature
Y. Amhouche,1A. El Abbassi,1K. Raïs,1E. Bendada,2and R. Rmaily1
Received22 Dec 2000
Accepted19 Mar 2001
Abstract
A new method for drain saturation voltage extraction in submicron MOSFETs is
presented. It is based on measurements of the partial derivative of the impact ionization
rate. The method has been tested using main of channel length MOSFET devices and
compared with others methods.
