Active and Passive Electronic Components

Active and Passive Electronic Components / 2001 / Article

Open Access

Volume 24 |Article ID 092361 | https://doi.org/10.1155/2001/92361

Y. Amhouche, A. El Abbassi, K. Raïs, E. Bendada, R. Rmaily, "New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature", Active and Passive Electronic Components, vol. 24, Article ID 092361, 6 pages, 2001. https://doi.org/10.1155/2001/92361

New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

Received22 Dec 2000
Accepted19 Mar 2001

Abstract

A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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