Abstract
In this study we have determined new coefficients for the physical model describing the
band-gap narrowing and the minority carriers lifetime. This was accomplished according
to the doping level of the thin emitter. This model allows us to take into account both the
effects of the heavy doping and the majority carrier degeneration for the very high level
of doping. The results we obtain by the corrected model are in good agreement with
those reported in the literature and in different experiments. They show us the
possibility of accurately evaluating the performances for the