Active and Passive Electronic Components

Active and Passive Electronic Components / 2001 / Article

Open Access

Volume 23 |Article ID 203769 | https://doi.org/10.1155/APEC.23.175

C. -T. Salame, "Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model", Active and Passive Electronic Components, vol. 23, Article ID 203769, 9 pages, 2001. https://doi.org/10.1155/APEC.23.175

Extraction of RDS(ON) of n-Channel Power MOSFET by Numerical Simulation Model

Received04 Sep 2000
Accepted13 Sep 2000

Abstract

In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (RDS(ON)). The IDS=f(VDS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of RDS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+VGS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measurement

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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