Extraction of R_DS(ON) of n-Channel Power MOSFET by Numerical Simulation Model

Abstract

In this paper we present an original method for n-channel power MOSFET resistance extraction in the operation mode (R_DS(ON)). The I_DS=f(V_DS) electrical characteristics measurements for the transistor and the Body-Drain junction are realized for the experimental determination and the extraction (by numerical analysis) of R_DS(ON), respectively. Values of this resistance are extracted for different positive bias applied between the gate and the source (+V_GS). Physicals parameters obtained from the numerical analysis are inspected, and results shows that the numerically analysed junction characteristic is in very good correlation with the electrical measurement