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Active and Passive Electronic Components
Volume 23, Issue 4, Pages 185-195

VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements

Radiation Technology, lnterfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands

Received 22 August 2000; Accepted 13 September 2000

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good correlation with the values given by the manufactured. Advantage of this model the high precision results with a low cost. Perhaps, the most important point in this model, that we can replace the other techniques usually employed in this study where we destroyed the device for cut and cross section of the structure. The proposed technique in this paper can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square etc...).