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Active and Passive Electronic Components
Volume 25, Issue 3, Pages 225-232

A New Junction Parameters Determination Using the Double Exponential Model

1Centre d'Etudes Fondamentales, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, France
2LP2A, Deépartement de Physique, Université Libanaise-Faculté de Sciences II, BP, Jdeidet 90656, Libyan Arab Jamahiriya

Received 15 November 2001; Revised 3 December 2001

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the accuracy is discussed from results of simulated extractions. An experimental test considers the emitter-base junction of bipolar transistors.