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Active and Passive Electronic Components
Volume 25, Issue 3, Pages 233-237

Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

1Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, China
2P. O. Box 345, Tainan Taiwan 704, China

Received 17 December 2001; Revised 21 March 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface and p-n+ junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to 105 has been obtained.