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Active and Passive Electronic Components
Volume 25 (2002), Issue 3, Pages 233-237
http://dx.doi.org/10.1080/08827510213494

Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

1Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, China
2P. O. Box 345, Tainan Taiwan 704, China

Received 17 December 2001; Revised 21 March 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

K. F. Yarn, “Experimental Studies of New GaAs Metal/Insulator/ Switches Using Low Temperature Oxide ,” Active and Passive Electronic Components, vol. 25, no. 3, pp. 233-237, 2002. doi:10.1080/08827510213494