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Active and Passive Electronic Components
Volume 25 (2002), Issue 3, Pages 245-248
http://dx.doi.org/10.1080/08827510213497

Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

1Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, China
2P. O. Box 345, Tainan Taiwan 704, China

Received 17 November 2001; Revised 21 March 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2 . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.