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Active and Passive Electronic Components
Volume 26, Issue 2, Pages 115-127

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs

1Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, China
2National Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan 701, China

Received 7 November 2002; Revised 17 November 2002

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the temperature-dependent effects on ID ,Gm and Schottky barrier are examined.