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Active and Passive Electronic Components
Volume 26 (2003), Issue 1, Pages 51-62

Voltage-Controlled Small Signal Analysis of Real Space Transfer Transistor

1Department of Electrical Engineering, Far East College, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, China
2Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, China

Received 7 November 2002; Revised 17 November 2002

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The research of determining the small signal equivalent circuit of the real space transfer (RST) transistor is investigated in this work. We propose a voltage-controlled mode model, called parameter extraction, to describe the performance of RST transistors at high frequency range. Besides, we also employ the value-determined model to simulate the microwave characteristics of RST and the theoretical and experimental results are compared. The influence of variables of RF performance is analyzed and theoretical results show that the cut-off frequency (fT) is mainly affected by the leakage resistances and the dimension of metal contact, but the maximum available gain frequencyfmax, is dependent on contact resistances.