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Active and Passive Electronic Components
Volume 26 (2003), Issue 1, Pages 1-10

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells

1LMER, Départment de Physique, Faculté des Sciences, Université de Tlemcen, BP: 119 Tlemcen, 13000, Algeria
2C2EA, Laboratoire M.O.P.S. (CNRS-Supélec) 2 rue Edouard Belin, Metz 57070, France
3LTMC, Institut de Physique, 1 Boulevard ARAGO, Metz 57070, France

Received 3 June 2001; Revised 13 August 2001

Copyright © 2003 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of the thin emitter. This model allows us to take into account both the effects of the heavy doping and the majority carrier degeneration for the very high level of doping. The results we obtain by the corrected model are in good agreement with those reported in the literature and in different experiments. They show us the possibility of accurately evaluating the performances for the n+p silicon solar cell. This model is then used to introduce a new concept for the thin layer emitter, called transparent emitter.