Table of Contents Author Guidelines Submit a Manuscript
Active and Passive Electronic Components
Volume 27 (2004), Issue 4, Pages 207-214

Structural and Optical Properties of In2S3 Thin Films Prepared by Flash Evaporation

1Equipe de physique des semi-conducteurs, Département de physique, Faculté des sciences, Université Ibn Zohr, Agadir B.P.28/S, Morocco
2Laboratoire de physique des solides et des couches minces, Département de physique, Faculté des sciences Semlalia, Marrakech BP:S/3293, Morocco

Received 12 October 2003; Revised 17 November 2003

Copyright © 2004 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In2S3thin films were deposited by flash evaporation of In2S3 powder. The effect of annealing in vacuum and under sulphur atmosphere on the structural and optical properties of these films was investigated. X-ray diffraction studies reveal that the as-deposited films are amorphous. The formation of β-In2S3 phase is obtained after annealing under vacuum at 693 K. Heat treatments under sulphur pressure lead to the formation of the above phase at a less annealing temperature (573 K). The energy dispersive X-ray (EDX) analysis reveals that the sulphurized films are nearly stoichiometric and those annealed in vacuum are sulphur deficient. Optical transmission spectra showed a slight shift of the absorption edge towards lower wavelengths. The optical gap value varied between 2.4 and 3 eV as a function of the film thickness and the annealing temperature.