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Active and Passive Electronic Components
Volume 2007, Article ID 17846, 7 pages
http://dx.doi.org/10.1155/2007/17846
Research Article

Spectroscopic Characterization of Electrodeposited Poly(o-toluidine) Thin Films and Electrical Properties of ITO/Poly(o-toluidine)/Aluminum Schottky Diodes

1LPSCM, Département de Physique, Faculté des Sciences Semlalia, Université Cadi Ayyad, Marrakech 40000, Morocco
2LSM, Département de Chimie, Faculté des Sciences Semlalia, Université Cadi Ayyad, Marrakech 40000, Morocco
3LAMO, Département de Physique, Faculté des Sciences, Université Cadi Ayyad, Kenitra 14000, Morocco
4SIAM, Département de Physique, Faculté des Sciences Semlalia, Université Cadi Ayyad, Marrakech 40000, Morocco

Received 29 July 2007; Accepted 8 October 2007

Academic Editor: Yalin Lu

Copyright © 2007 A. Elmansouri et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. The electrosynthesized films were characterized by UV-Visible, FT-Raman, and FTIR spectroscopies. The optical transmissions of the as-deposited films were measured in the 400–900 nm wavelength range. These measurements showed that the optical band gap of the polymer films is in the order of 2.52 eV. The FT-Raman and FTIR measurements showed that the POT film is composed of imine and amine units. ITO/POT/Al devices were fabricated by thermal evaporation of aluminum circular contacts on films deposited on ITO-coated glass. The nonlinear current-voltage characteristics of these devices indicate a rectifying behavior. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The measured C-V and C-F characteristics are presented.