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Active and Passive Electronic Components
Volume 2008, Article ID 275357, 9 pages
http://dx.doi.org/10.1155/2008/275357
Research Article

Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

1Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, India
2International Institute of Information Technology, Visva Bharati University, X-1, 8/3, Block-EP, Sector V, Salt Lake Electronics Complex, Kolkata 700091, India
3Centre of Millimeterwave Semiconductor Devices and Systems, Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, India

Received 4 December 2007; Accepted 14 March 2008

Academic Editor: Tibor Berceli

Copyright © 2008 Moumita Mukherjee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Moumita Mukherjee, Nilratan Mazumder, and Sitesh Kumar Roy, “Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime,” Active and Passive Electronic Components, vol. 2008, Article ID 275357, 9 pages, 2008. https://doi.org/10.1155/2008/275357.