Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime

<table>Effect of series resistance on <svg height="11.3125" id="M107" style="vertical-align:-0.10919pt" version="1.1" viewbox="0 0 19.674999 11.3125" width="19.674999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> power density of 4H-Sic Terahertz IMPATT diode.</table>

Active and Passive Electronic Components

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Figure 2

Figure 2: Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency Regime 