Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide <i>N</i>-Channel MOSFET

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Active and Passive Electronic Components

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Figure 3

Figure 3: Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide <i>N</i>-Channel MOSFET 

Figure 3 | Characterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin Oxide N-Channel MOSFET 