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Active and Passive Electronic Components
Volume 2011, Article ID 821305, 7 pages
http://dx.doi.org/10.1155/2011/821305
Research Article

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

High Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

Received 1 October 2010; Accepted 6 December 2010

Academic Editor: David Moran

Copyright © 2011 S. Taking et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3 as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.