Research Article

AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

Figure 6

𝐼 D S - 𝑉 D S characteristics of fabricated unprotected and unpassivated with 3 μm × 100 μm device (a) AlGaN/GaN HEMT and (b) AlN/GaN HEMT.
821305.fig.006a
(a)
821305.fig.006b
(b)