AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Figure 7
Process flow for fabrication of protected and passivated AlN/GaN MOS-HEMTs using the gate wrap-around technique. Processing includes (a) sample cleaning and deoxidation, (b) 2 nm Al deposition, (c) etching Ohmic regions and thermal oxidation of Al, (d) Ohmic metallisation and annealing, and (e) gate metallisation and device measurements.
