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Active and Passive Electronic Components
Volume 2011, Article ID 850481, 8 pages
Research Article

Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

ORDIST, Graduate School of Engineering Science, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan

Received 14 June 2011; Revised 11 July 2011; Accepted 11 July 2011

Academic Editor: G. Ghibaudo

Copyright © 2011 Yasuhisa Omura. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for 𝑇 < 7 0 0 K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications.