Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
Figure 10
Temperature dependence of subthreshold swing and threshold voltage: HTOT SOI MOSFET compared to conventional SOI MOSFET with a 10-nm-thick SOI layer. (a) Characteristics of HTOT SOI MOSFET with 2-nm-thick local-thin body. (b) Characteristics of HTOT SOI MOSFET with 1-nm-thick local-thin body.
