Active and Passive Electronic Components

Research Article

Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

Figure 11

𝐼 O N versus 𝐼 O F F characteristics of HTOT SOI MOSFET at Vd = 0.1 V. It is assumed that V th = 0.3 V. 𝐼 O N is defined at Vg = 𝑉 t h + 0.7 V, and 𝐼 O F F is defined at Vg = 𝑉 t h – 0.3 V.
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