Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

Figure 4

𝐼_𝑑- 𝑉_𝑑 characteristics of HTOT SOI MOSFET for various gate voltage conditions at 300 K. The device has a 40-nm long p-type region (L_p); 𝐿_𝑔=100 nm. The device has 1-nm-thick local-thin Si regions at both sides of n-type Si body.